JANS1N5552US
DIODE GEN PURP 600V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5552US is a general-purpose silicon rectifier diode designed for demanding applications. This device features a 600 V reverse voltage rating and a 3 A average rectified current capability. The SQ-MELF, B package ensures efficient heat dissipation for surface mount integration. With a standard recovery time of 2 µs, it is suitable for applications requiring moderate switching speeds. The diode exhibits a low reverse leakage current of 1 µA at 150 V and a forward voltage drop of 1.2 V at 9 A. The operating junction temperature range is -65°C to 175°C. This component meets MIL-PRF-19500/420 qualification, making it ideal for military and aerospace systems, as well as other high-reliability industrial applications requiring robust performance and stringent quality standards.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/420 |