JANS1N5552
DIODE GEN PURP 600V 3A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANS1N5552 is a military-grade general-purpose diode designed for demanding applications. This through-hole component features a 600 V reverse voltage rating and a 3 A average rectified forward current. With a maximum forward voltage of 1.2 V at 9 A and a reverse leakage current of only 1 µA at 600 V, it offers efficient rectification. The JANS1N5552 operates over a junction temperature range of -65°C to 175°C and is manufactured to MIL-PRF-19500/420 qualifications. Its axial package (B) and standard recovery speed make it suitable for use in aerospace, defense, and industrial power supply systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Qualification | MIL-PRF-19500/420 |
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