JANS1N5551US/TR
DIODE GEN PURP 400V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5551US-TR is a military-grade general-purpose diode with a 400V reverse voltage rating and a 3A average rectified current (Io). This device features a fast reverse recovery time of 2 µs and a forward voltage drop of 1.2V at 9A. Packaged in a SQ-MELF, B surface-mount case and supplied on tape and reel (TR), it meets the stringent requirements of MIL-PRF-19500/420. The operating junction temperature range is -65°C to 175°C. This component is suitable for demanding applications across aerospace, defense, and high-reliability industrial sectors requiring robust performance and extended temperature operation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Qualification | MIL-PRF-19500/420 |
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