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JANS1N5550US/TR

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JANS1N5550US/TR

DIODE GEN PURP 200V 3A B SQ-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANS1N5550US-TR is a military-grade, general-purpose silicon rectifier diode. This component features a 200V reverse standoff voltage and a 3A average rectified forward current capability. The diode is housed in a space-efficient SQ-MELF, B package suitable for surface mounting and supplied on tape and reel for automated assembly. It boasts a low forward voltage drop of 1.2V at 9A and a reverse recovery time of 2µs, classifying it as a standard recovery diode. Operating across a wide junction temperature range of -65°C to 175°C, this device is qualified to MIL-PRF-19500/420, ensuring reliability for demanding applications in aerospace, defense, and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)3A
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 9 A
QualificationMIL-PRF-19500/420

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