JANS1N5420US
DIODE GEN PURP 600V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANS1N5420US is a military-grade, general-purpose diode designed for demanding applications. This device features a maximum reverse voltage of 600V and a continuous average rectified forward current of 3A. It is housed in a SQ-MELF, B package, suitable for surface mounting. With a forward voltage of 1.5V at 9A and a reverse recovery time of 400ns, this diode is classified as fast recovery. The operating junction temperature range is -65°C to 175°C. This component is qualified under MIL-PRF-19500/411, indicating its suitability for aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 400 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Qualification | MIL-PRF-19500/411 |
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