JANS1N5418US
DIODE GEN PURP 400V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5418US is a general-purpose diode designed for demanding applications. This component features a 400V reverse voltage rating and a 3A average rectified current capability. The SQ-MELF, B package facilitates efficient surface mounting. It offers a fast recovery time of 150 ns and a forward voltage drop of 1.5V at 9A. Reverse leakage is a minimal 1 µA at 150V. Operating across a junction temperature range of -65°C to 175°C, this MIL-PRF-19500/411 qualified device is suitable for military and industrial sectors requiring robust performance and high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/411 |
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