JANS1N5417US
DIODE GEN PURP 200V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANS1N5417US is a general-purpose diode featuring a 200V reverse voltage rating and a 3A average rectified current capability. This component, qualified to MIL-PRF-19500/411, is housed in a SQ-MELF, B surface-mount package. It exhibits a forward voltage drop of 1.5V at 9A and a reverse leakage of 1 µA at 150V. The diode's reverse recovery time is specified at 150 ns, classifying it within the fast recovery speed category. Operating temperatures range from -65°C to 175°C. This device is suitable for applications in aerospace, defense, and industrial sectors requiring high reliability and robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/411 |
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