JANS1N5415
DIODE GEN PURP 50V 3A B AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5415 is a military-grade, general-purpose diode designed for demanding applications. This through-hole component, packaged in B, Axial format, offers a repetitive peak reverse voltage of 50V and a continuous average rectified current capability of 3A. It features a maximum forward voltage drop of 1.5V at 9A and a reverse leakage current of 1 µA at 150V. The JANS1N5415 operates across a wide temperature range of -65°C to 175°C and is qualified to MIL-PRF-19500/411 standards. Its reverse recovery time is rated at 150 ns, classifying it as a fast recovery diode. This component finds application in aerospace, defense, and industrial power supply systems requiring high reliability and performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/411 |
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