JANS1N3595US
DIODE GEN PURP 200MA B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N3595US is a general-purpose diode with a 200mA average rectified current (Io). This JANS-qualified device, adhering to MIL-S-19500-241 specifications, features a low reverse leakage of 1 nA at 125V. The diode operates within a junction temperature range of -65°C to 150°C and is housed in a compact SQ-MELF, B package for surface mounting. It exhibits a forward voltage (Vf) of 1V at 200mA and a reverse recovery time of 3µs. This component is commonly employed in aerospace and defense applications requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 3 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 1 nA @ 125 V |
| Qualification | MIL-S-19500-241 |
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