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JANS1N3595US

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JANS1N3595US

DIODE GEN PURP 200MA B SQ-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANS1N3595US is a general-purpose diode with a 200mA average rectified current (Io). This JANS-qualified device, adhering to MIL-S-19500-241 specifications, features a low reverse leakage of 1 nA at 125V. The diode operates within a junction temperature range of -65°C to 150°C and is housed in a compact SQ-MELF, B package for surface mounting. It exhibits a forward voltage (Vf) of 1V at 200mA and a reverse recovery time of 3µs. This component is commonly employed in aerospace and defense applications requiring high reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedSmall Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)3 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)200mA
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 150°C
GradeMilitary
Voltage - Forward (Vf) (Max) @ If1 V @ 200 mA
Current - Reverse Leakage @ Vr1 nA @ 125 V
QualificationMIL-S-19500-241

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