JANKCE1N5804
DIODE GEN PURP 100V 1A DIEManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANKCE1N5804 is a general-purpose diode, specifically a 1A, 100V surface mount die. This component is qualified to MIL-PRF-19500/477, indicating its suitability for military applications. Featuring a fast recovery time of 25 ns and a forward voltage of 875 mV at 1A, it is designed for applications requiring efficient rectification. The diode exhibits a low reverse leakage current of 1 µA at 100V and a capacitance of 25pF at 10V and 1MHz. Its wide operating temperature range of -65°C to 175°C junction temperature ensures reliability in demanding environments. This component is commonly utilized in aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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