JANKCE1N5802
DIODE GEN PURP 50V 1A DIEManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANKCE1N5802 is a general-purpose diode rated for 50V reverse voltage and 1A average rectified current. This surface mount die features a fast recovery time of 25ns, suitable for applications requiring rapid switching. The diode exhibits a typical forward voltage of 875mV at 1A and a low reverse leakage of 1µA at 50V. With a junction operating temperature range of -65°C to 175°C and MIL-PRF-19500/477 qualification, this component is designed for demanding environments, including aerospace and defense applications. The capacitance at 10V and 1MHz is 25pF. The JANKCE1N5802 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
| Qualification | MIL-PRF-19500/477 |
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