JANHCE1N5811
DIODE GEN PURP 150V 3A DIEManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's JANHCE1N5811 is a military-grade general-purpose diode designed for high-reliability applications. This device, supplied as a die in Tape & Reel (TR) packaging, offers a maximum DC reverse voltage of 150V and an average rectified current of 3A. Its fast recovery time is rated at 30 ns. The forward voltage drop is a maximum of 875 mV at 4A, with a low reverse leakage current of 5 µA at 150V. Exhibiting a capacitance of 60pF at 10V and 1MHz, the JANHCE1N5811 operates across a junction temperature range of -65°C to 175°C. This component is qualified under MIL-PRF-19500/477, making it suitable for demanding applications in aerospace, defense, and other critical sectors requiring robust semiconductor performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
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