JANHCE1N5809
DIODE GEN PURP 100V 3A DIEManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANHCE1N5809 is a general-purpose rectifier diode supplied as a die. This device features a 100V reverse voltage rating and a 3A average rectified forward current. With a fast recovery time of 30 ns, it is suited for applications requiring efficient high-frequency rectification. The diode exhibits a forward voltage drop of 875mV at 4A and a reverse leakage current of 5 µA at 100V. Its junction operating temperature range is -65°C to 175°C. The device's low capacitance of 60pF at 10V and 1MHz contributes to its suitability in high-speed switching circuits. This component is commonly utilized in power supplies, automotive electronics, and industrial control systems. It is provided in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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