JAN1N6658R
DIODE GEN PURP 150V 15A TO254Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N6658R is a military-grade general-purpose diode with a maximum repetitive reverse voltage of 150V and an average rectified forward current of 15A. This through-hole component, housed in a TO-254-3, TO-254AA package, features a forward voltage drop of 1.2V at 20A. Its reverse leakage current is a low 10 µA at 150V. Designed for demanding applications, it meets MIL-PRF-19500/616 qualification. The diode exhibits a reverse recovery time of 35 ns, categorizing it as a fast recovery diode. Its capacitance is 150pF at 10V and 1MHz. This device is suitable for use in aerospace and defense systems requiring high reliability and robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 150pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-254 |
| Operating Temperature - Junction | - |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 150 V |
| Qualification | MIL-PRF-19500/616 |