JAN1N6643US
DIODE GEN PURP 50V 300MA D-5DManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N6643US is a general-purpose diode with a 50V reverse voltage rating and 300mA average rectified current capacity. This military-grade component, qualified to MIL-PRF-19500/578, features a fast recovery time of 6ns, suitable for applications requiring rapid switching. The SQ-MELF, D package (D-5D) facilitates surface mounting, and its operating junction temperature range is -65°C to 175°C. Key electrical characteristics include a forward voltage of 1.2V at 100mA and a reverse leakage of 500nA at 75V. Capacitance at 0V and 1MHz is specified at 5pF. This device is commonly utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, D |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 6 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5D |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 75 V |
| Qualification | MIL-PRF-19500/578 |
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