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JAN1N6640US

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JAN1N6640US

DIODE GEN PURP 50V 300MA D-5B

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N6640US is a military-grade, fast-recovery general-purpose diode. This JAN qualified component offers a 50V reverse voltage rating and a 300mA average rectified current. Key specifications include a maximum forward voltage of 1V at 300mA and a low reverse leakage of 100 nA at 50V. The reverse recovery time is rated at 4ns. This device is housed in a SQ-MELF, E / D-5B package suitable for surface mounting and operates across a temperature range of -65°C to 175°C. It is manufactured to MIL-PRF-19500/609 standards. This component finds application in various defense and aerospace systems requiring high reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSQ-MELF, E
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)4 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)300mA
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1 V @ 300 mA
Current - Reverse Leakage @ Vr100 nA @ 50 V
QualificationMIL-PRF-19500/609

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