JAN1N6640US
DIODE GEN PURP 50V 300MA D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N6640US is a military-grade, fast-recovery general-purpose diode. This JAN qualified component offers a 50V reverse voltage rating and a 300mA average rectified current. Key specifications include a maximum forward voltage of 1V at 300mA and a low reverse leakage of 100 nA at 50V. The reverse recovery time is rated at 4ns. This device is housed in a SQ-MELF, E / D-5B package suitable for surface mounting and operates across a temperature range of -65°C to 175°C. It is manufactured to MIL-PRF-19500/609 standards. This component finds application in various defense and aerospace systems requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 300 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Qualification | MIL-PRF-19500/609 |