JAN1N6638US/TR
DIODE GP 150V 300MA B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JAN1N6638US-TR is a military-grade, general-purpose diode designed for demanding applications. This component features a 150V reverse voltage rating and a 300mA average rectified current. Its fast recovery time of 20 ns makes it suitable for high-frequency rectification. The diode exhibits a low reverse leakage current of 500 nA at 150V and a forward voltage drop of 1.1V at 200mA. Constructed with standard technology, it is housed in a SQ-MELF (DO-213AB) package for surface mounting, delivered on tape and reel. The operating junction temperature range is -65°C to 175°C. Qualification under MIL-PRF-19500/578 underscores its reliability in aerospace, defense, and industrial sectors. The capacitance @ Vr, F is 2.5pF @ 0V, 1MHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-213AB, MELF |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 150 V |
| Qualification | MIL-PRF-19500/578 |
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