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JAN1N6638US/TR

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JAN1N6638US/TR

DIODE GP 150V 300MA B SQ-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

The Microchip Technology JAN1N6638US-TR is a military-grade, general-purpose diode designed for demanding applications. This component features a 150V reverse voltage rating and a 300mA average rectified current. Its fast recovery time of 20 ns makes it suitable for high-frequency rectification. The diode exhibits a low reverse leakage current of 500 nA at 150V and a forward voltage drop of 1.1V at 200mA. Constructed with standard technology, it is housed in a SQ-MELF (DO-213AB) package for surface mounting, delivered on tape and reel. The operating junction temperature range is -65°C to 175°C. Qualification under MIL-PRF-19500/578 underscores its reliability in aerospace, defense, and industrial sectors. The capacitance @ Vr, F is 2.5pF @ 0V, 1MHz.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: UnknownPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-213AB, MELF
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)20 ns
TechnologyStandard
Capacitance @ Vr, F2.5pF @ 0V, 1MHz
Current - Average Rectified (Io)300mA
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 200 mA
Current - Reverse Leakage @ Vr500 nA @ 150 V
QualificationMIL-PRF-19500/578

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