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JAN1N6631U/TR

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JAN1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

The Microchip Technology JAN1N6631U-TR is a high-reliability, military-grade general-purpose diode engineered for demanding applications. This device features a 1000 V DC reverse voltage rating and a maximum forward voltage of 1.6 V at 1.4 A. With an average rectified current capability of 1.4 A, it exhibits a low reverse leakage of 4 µA at its maximum reverse voltage. The component is supplied in an E-MELF package, suitable for surface mounting and delivered on tape and reel (TR) for automated assembly. Its operational temperature range spans from -65°C to 150°C. Qualified under MIL-PRF-19500/590, the JAN1N6631U-TR is typically employed in aerospace, defense, and industrial systems requiring robust performance and exceptional reliability. The diode's fast recovery characteristic, with a trr of 60 ns, makes it suitable for various power switching and rectification circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)60 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1.4A
Supplier Device PackageE-MELF
Operating Temperature - Junction-65°C ~ 150°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 1.4 A
Current - Reverse Leakage @ Vr4 µA @ 1000 V
QualificationMIL-PRF-19500/590

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