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JAN1N6630U/TR

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JAN1N6630U/TR

DIODE GP 990V 1.4A SQ-MELF B

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N6630U-TR is a fast recovery general-purpose diode with a reverse voltage rating of 990V and an average rectified current of 1.4A. This military-grade component, qualified to MIL-PRF-19500/590, features a SQ-MELF package for surface mounting. Its reverse leakage current is a low 2 µA at 990V, and it exhibits a forward voltage drop of 1.4V at 1.4A. The reverse recovery time (trr) is specified at 60 ns, classifying it as a fast recovery diode within the 200mA to 500ns range. The operating junction temperature spans from -65°C to 150°C. Capacitance is rated at 40pF at 10V and 1MHz. This diode is commonly utilized in aerospace, defense, and high-reliability power supply applications. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)60 ns
TechnologyStandard
Capacitance @ Vr, F40pF @ 10V, 1MHz
Current - Average Rectified (Io)1.4A
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 150°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)990 V
Voltage - Forward (Vf) (Max) @ If1.4 V @ 1.4 A
Current - Reverse Leakage @ Vr2 µA @ 990 V
QualificationMIL-PRF-19500/590

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