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JAN1N6628US

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JAN1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Diode 660 V 1.75A Surface Mount D-5B

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSQ-MELF, E
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F40pF @ 10V, 1MHz
Current - Average Rectified (Io)1.75A
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 150°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)660 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 2 A
Current - Reverse Leakage @ Vr2 µA @ 660 V
QualificationMIL-PRF-19500/590

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