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JAN1N6628U/TR

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JAN1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology's JAN1N6628U-TR is a general-purpose, fast-recovery diode rated for 660V (Vr) and 1.75A (Io). This military-grade component features a low junction capacitance of 40pF at 10V and 1MHz, with a reverse leakage of only 2 µA at its maximum reverse voltage. The forward voltage drop (Vf) is a maximum of 1.35V at 2A. Designed for high reliability, it meets MIL-PRF-19500/590 qualification. The diode's reverse recovery time (trr) is 45 ns, classifying it as fast recovery. It is supplied in a SQ-MELF package, mounted via surface mount technology, and delivered on tape and reel (TR). This component is suitable for applications requiring robust performance in demanding environments, including aerospace and defense systems. The operating junction temperature range is -65°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)45 ns
TechnologyStandard
Capacitance @ Vr, F40pF @ 10V, 1MHz
Current - Average Rectified (Io)1.75A
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 150°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)660 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 2 A
Current - Reverse Leakage @ Vr2 µA @ 660 V
QualificationMIL-PRF-19500/590

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