JAN1N6628U/TR
DIODE GP 660V 1.75A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's JAN1N6628U-TR is a general-purpose, fast-recovery diode rated for 660V (Vr) and 1.75A (Io). This military-grade component features a low junction capacitance of 40pF at 10V and 1MHz, with a reverse leakage of only 2 µA at its maximum reverse voltage. The forward voltage drop (Vf) is a maximum of 1.35V at 2A. Designed for high reliability, it meets MIL-PRF-19500/590 qualification. The diode's reverse recovery time (trr) is 45 ns, classifying it as fast recovery. It is supplied in a SQ-MELF package, mounted via surface mount technology, and delivered on tape and reel (TR). This component is suitable for applications requiring robust performance in demanding environments, including aerospace and defense systems. The operating junction temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 45 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.75A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 660 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 660 V |
| Qualification | MIL-PRF-19500/590 |
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