JAN1N6628/TR
DIODE GEN PURP 660V 1.75AManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Diode 660 V 1.75A Through Hole
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1.75A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 660 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 1.2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 600 V |
| Qualification | MIL-PRF-19500/590 |