JAN1N6627US
DIODE GEN PURP 440V 1.75A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N6627US is a military-grade, fast recovery general-purpose diode. This component features a maximum repetitive peak reverse voltage of 440 V and an average rectified forward current handling capability of 1.75 A. The forward voltage drop is specified at a maximum of 1.35 V at 1.2 A. Reverse leakage current is a low 2 µA at 440 V. The device boasts a reverse recovery time (trr) of 30 ns, classifying it as a fast recovery diode. Its capacitance is rated at 40 pF at 10 V and 1 MHz. Manufactured to MIL-PRF-19500/590 standards, the JAN1N6627US is housed in a SQ-MELF, E (D-5B) surface-mount package. This diode is suitable for applications requiring high reliability in demanding environments, including aerospace and defense systems. Operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.75A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 440 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 1.2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 440 V |
| Qualification | MIL-PRF-19500/590 |
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