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JAN1N6627US

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JAN1N6627US

DIODE GEN PURP 440V 1.75A D-5B

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N6627US is a military-grade, fast recovery general-purpose diode. This component features a maximum repetitive peak reverse voltage of 440 V and an average rectified forward current handling capability of 1.75 A. The forward voltage drop is specified at a maximum of 1.35 V at 1.2 A. Reverse leakage current is a low 2 µA at 440 V. The device boasts a reverse recovery time (trr) of 30 ns, classifying it as a fast recovery diode. Its capacitance is rated at 40 pF at 10 V and 1 MHz. Manufactured to MIL-PRF-19500/590 standards, the JAN1N6627US is housed in a SQ-MELF, E (D-5B) surface-mount package. This diode is suitable for applications requiring high reliability in demanding environments, including aerospace and defense systems. Operating temperature range is -65°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSQ-MELF, E
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F40pF @ 10V, 1MHz
Current - Average Rectified (Io)1.75A
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 150°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)440 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 1.2 A
Current - Reverse Leakage @ Vr2 µA @ 440 V
QualificationMIL-PRF-19500/590

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