JAN1N6625/TR
DIODE GEN PURP 1KV 1AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N6625-TR is a military-grade, fast-recovery rectifier diode designed for demanding applications. This through-hole component features an axial package (A) and is supplied in tape and reel (TR) for automated assembly. It offers a maximum repetitive reverse voltage (Vr) of 1000V and a continuous average rectified forward current (Io) of 1A. The diode exhibits a typical forward voltage drop (Vf) of 1.75V at 1A and a reverse leakage current of 1 µA at 1V. With a reverse recovery time (trr) of 30 ns, it is classified as a fast-recovery device. This component is compliant with MIL-PRF-19500/585 and operates across a junction temperature range of -65°C to 150°C. Its robust specifications make it suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1 V |
| Qualification | MIL-PRF-19500/585 |