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JAN1N6625/TR

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JAN1N6625/TR

DIODE GEN PURP 1KV 1A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N6625-TR is a military-grade, fast-recovery rectifier diode designed for demanding applications. This through-hole component features an axial package (A) and is supplied in tape and reel (TR) for automated assembly. It offers a maximum repetitive reverse voltage (Vr) of 1000V and a continuous average rectified forward current (Io) of 1A. The diode exhibits a typical forward voltage drop (Vf) of 1.75V at 1A and a reverse leakage current of 1 µA at 1V. With a reverse recovery time (trr) of 30 ns, it is classified as a fast-recovery device. This component is compliant with MIL-PRF-19500/585 and operates across a junction temperature range of -65°C to 150°C. Its robust specifications make it suitable for use in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseA, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1A
Supplier Device PackageA, Axial
Operating Temperature - Junction-65°C ~ 150°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.75 V @ 1 A
Current - Reverse Leakage @ Vr1 µA @ 1 V
QualificationMIL-PRF-19500/585

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