JAN1N6623US/TR
DIODE GEN PURP 880V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N6623US-TR is a military-grade, fast-recovery general-purpose diode with a maximum DC reverse voltage of 880V and an average rectified current of 1A. This surface-mount component, housed in a SQ-MELF, A (D-5A) package, exhibits a forward voltage of 1.55V at 1A and a reverse leakage of 500 nA at 880V. Its reverse recovery time is 50 ns, classifying it under the fast recovery category. The diode operates across a junction temperature range of -65°C to 150°C and is supplied in a Tape & Reel (TR) package. This component adheres to MIL-PRF-19500/585 qualification standards and finds application in aerospace, defense, and high-reliability industrial systems requiring robust performance under demanding conditions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 880 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 1 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 880 V |
| Qualification | MIL-PRF-19500/585 |
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