JAN1N6073
DIODE GEN PURP 50V 850MA A-PAKManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JAN1N6073 is a military-grade, general-purpose diode designed for demanding applications. This through-hole component, packaged in an A, Axial configuration, offers a maximum DC reverse voltage of 50 V and an average rectified forward current capability of 850mA. It features a forward voltage drop of 2.04 V at 9.4 A and a reverse leakage current of 1 µA at 50 V. The JAN1N6073 boasts a reverse recovery time of 30 ns, classifying it as a fast recovery diode. Operating across a junction temperature range of -65°C to 155°C, this component is qualified under MIL-PRF-19500/503. Its robust design makes it suitable for use in defense, aerospace, and industrial sectors requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 850mA |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 155°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 2.04 V @ 9.4 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
| Qualification | MIL-PRF-19500/503 |
Request a Quote
Clients Also Buy
1N5806US/TR
DIODE GEN PURP 150V 1A D-5A
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5553/TR
DIODE GEN PURP 800V 3A
