JAN1N5822US/TR
DIODE SCHOTTKY 40V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5822US-TR is a high-performance Schottky barrier rectifier designed for demanding applications. This device features a 40V reverse voltage rating and a 3A average rectified forward current capability. The low forward voltage drop of 500mV at 3A ensures efficient power handling. Constructed with Schottky technology, it offers fast switching characteristics. This component is housed in a SQ-MELF, B surface mount package, supplied on tape and reel for automated assembly. Qualified to MIL-PRF-19500/620 and operating across a junction temperature range of -65°C to 150°C, the JAN1N5822US-TR is suitable for use in aerospace, defense, and industrial power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Qualification | MIL-PRF-19500/620 |
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