JAN1N5822/TR
DIODE SCHOTTKY 40V 3AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5822-TR is a military-grade Schottky diode, rated for 40V reverse voltage and 3A average rectified current. This component features a low forward voltage drop of 500mV at 3A, minimizing power dissipation. The reverse leakage current is specified at 100 µA maximum at 40V. Packaged in B, Axial format for through-hole mounting, this device is supplied on tape and reel (TR). Its operating junction temperature range is -65°C to 125°C. Qualified to MIL-PRF-19500/620, the JAN1N5822-TR is suitable for demanding applications in aerospace, defense, and high-reliability power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V |
| Qualification | MIL-PRF-19500/620 |
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