JAN1N5819UR-1/TR
DIODE SCHOTTKY 45V 1A DO213ABManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JAN1N5819UR-1-TR is a military-grade Schottky rectifier designed for high-reliability applications. This device features a 45V reverse voltage rating and a 1A average rectified current capability. The forward voltage drop is specified at a maximum of 490mV at 1A. Reverse leakage current is a low 50 µA at 45V. With a junction operating temperature range of -65°C to 125°C, this component is suitable for demanding environments. The DO-213AB MELF package offers robust surface-mount construction, and the device is supplied on tape and reel (TR) for automated assembly. Qualification under MIL-PRF-19500/586 further underscores its suitability for aerospace and defense systems, as well as other industrial applications requiring stringent performance and reliability. The capacitance is 70pF at 5V and 1MHz.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-213AB, MELF (Glass) |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 70pF @ 5V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-213AB (MELF, LL41) |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 45 V |
| Voltage - Forward (Vf) (Max) @ If | 490 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 45 V |
| Qualification | MIL-PRF-19500/586 |
Request a Quote
Clients Also Buy
1N649-1
DIODE GEN PURP 600V 400MA DO35
MSG150
DIODE SCHOTTKY 50V 1A DO204AL
UFS370JE3/TR13
DIODE GEN PURP 700V 3A DO214AB
