JAN1N5816R
DIODE GEN PURP 150V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5816R is a military-grade rectifier diode, specified for high-reliability applications. This diode features a 150V reverse voltage (Vr) capability and a 20A average rectified forward current (Io). Its forward voltage drop (Vf) is a maximum of 950mV at 20A. The device exhibits a reverse leakage current of 10 µA at 150V. With a reverse recovery time (trr) of 35 ns, it is classified as a fast recovery diode. Key parameters include a junction capacitance of 300pF at 10V and 1MHz. The JAN1N5816R is housed in a DO-203AA (DO-4) stud mount package, suitable for demanding thermal management. Its operating junction temperature range is -65°C to 175°C. This component meets the stringent qualifications of MIL-PRF-19500/478, finding application in aerospace, defense, and industrial power systems requiring robust performance and extended operational life.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 150 V |
| Qualification | MIL-PRF-19500/478 |
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