JAN1N5812R
DIODE GEN PURP 50V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5812R is a military-grade general-purpose diode with a 50V reverse voltage rating and a 20A average rectified forward current. This stud-mount device, packaged in a DO-203AA (DO-4) configuration, offers a forward voltage drop of 950mV at 20A. Reverse leakage is specified at 10 µA at 50V. Featuring a reverse recovery time of 35 ns, this diode is suitable for applications requiring fast recovery characteristics. Operating across a junction temperature range of -65°C to 175°C, its qualification under MIL-PRF-19500/478 underscores its reliability in demanding environments. The capacitance at 10V and 1MHz is 300pF. This component is utilized in power supply circuits and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | MIL-PRF-19500/478 |
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