JAN1N5812
DIODE GEN PURP 50V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5812 is a general-purpose diode featuring a 50V reverse voltage rating and a 20A average rectified forward current (Io). This device, manufactured by Microchip Technology, utilizes standard rectifier technology and is housed in a DO-203AA (DO-4) stud mount package for robust thermal management. The diode exhibits a forward voltage drop (Vf) of 950mV at 20A and a reverse leakage current of 10 µA at its maximum reverse voltage. With a reverse recovery time (trr) of 35 ns, it is classified as a fast recovery diode. The JAN1N5812 operates across a junction temperature range of -65°C to 175°C and is qualified to MIL-PRF-19500/478, indicating its suitability for demanding military applications. This component finds use in power supply rectification and general switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | MIL-PRF-19500/478 |
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