JAN1N5809URS/TR
UFR,FRRManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JAN1N5809URS-TR is a high-performance, military-grade fast recovery diode. Rated for 100V reverse voltage and 3A average rectified current, this component features a low forward voltage of 875mV at 4A and a reverse leakage of just 5µA at 100V. Its fast recovery time of 30ns (trr) is crucial for applications requiring efficient switching. The diode's capacitance is 60pF at 10V and 1MHz. Packaged in a space-saving SQ-MELF, B surface mount configuration and supplied on tape and reel (TR), this device is qualified to MIL-PRF-19500/477. It finds application in demanding sectors such as aerospace, defense, and high-reliability industrial systems where robust performance and stringent quality standards are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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