JAN1N5809URS
DIODE GEN PURP 100V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5809URS is a military-grade, general-purpose diode with a 100V reverse voltage rating and a 3A average rectified forward current. This SQ-MELF packaged device offers a fast recovery time of 30 ns and a forward voltage drop of 875mV at 4A. The device exhibits a low reverse leakage current of 5 µA at 100V and a capacitance of 60pF at 10V and 1MHz. Qualified to MIL-PRF-19500/477, the JAN1N5809URS is suitable for applications in aerospace and defense, as well as demanding industrial environments requiring robust performance and reliability. Its operating junction temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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