JAN1N5807URS/TR
UFR,FRRManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology's JAN1N5807URS-TR is a military-grade, fast recovery rectifier diode designed for high-reliability applications. This component features a 50V reverse voltage rating and a 3A average rectified forward current capability. Its SQ-MELF, B package facilitates efficient surface mounting, and it is supplied on tape and reel for automated assembly processes. Key performance specifications include a maximum forward voltage of 875mV at 4A and a reverse leakage of only 5 µA at 50V. The diode exhibits a reverse recovery time of 30 ns, qualifying it for fast switching applications. With an operating junction temperature range of -65°C to 175°C and qualification under MIL-PRF-19500/477, this device is suitable for demanding environments in aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
| Qualification | MIL-PRF-19500/477 |
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