JAN1N5807URS
DIODE GEN PURP 50V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5807URS is a military-grade, general-purpose diode with a 50V reverse voltage rating and 3A average forward current capability. This device features a fast recovery time of 30ns, making it suitable for applications requiring efficient switching. The SQ-MELF, B package ensures robust surface-mount integration. Key specifications include a forward voltage of 875mV at 4A and a reverse leakage current of 5µA at 50V. With a junction operating temperature range of -65°C to 175°C, this diode is qualified under MIL-PRF-19500/477, indicating its suitability for demanding aerospace and defense applications. The capacitance at 10V and 1MHz is 60pF.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
| Qualification | MIL-PRF-19500/477 |
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