JAN1N5806URS
DIODE GEN PURP 150V 1A A-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5806URS is a general-purpose diode designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/477, features a 1A average rectified current capability and a 150V maximum DC reverse voltage. Its A-MELF (SQ-MELF, A) surface mount package ensures efficient heat dissipation for operation across a wide temperature range of -65°C to 175°C. With a typical forward voltage of 875mV at 1A and a reverse leakage of 1 µA at 150V, this standard technology diode offers reliable performance. It exhibits a reverse recovery time of 25 ns, classifying it as a fast recovery diode. Applications for this component are found in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
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