JAN1N5804US
DIODE GEN PURP 100V 2.5A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5804US is a military-grade, general-purpose rectifier diode. This component features a 100V reverse voltage rating and a maximum forward voltage of 975mV at 2.5A. With an average rectified current (Io) of 2.5A, it exhibits a reverse leakage of 1 µA at 100V. The JAN1N5804US has a fast recovery time of 25 ns and a junction operating temperature range of -65°C to 175°C. Its SQ-MELF, A package, also known as D-5A, is suitable for surface mount applications. The device is qualified to MIL-PRF-19500/477, indicating its suitability for demanding applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 2.5A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 2.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |