JAN1N5804URS
DIODE GEN PURP 100V 1A A-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JAN1N5804URS is a military-grade general-purpose diode. This A-MELF packaged component offers a 1A average rectified current (Io) and a maximum DC reverse voltage (Vr) of 100V. Featuring a forward voltage (Vf) of 875mV at 1A, it also exhibits a reverse leakage current of 1 µA at 100V. The diode's capacitance is rated at 25pF @ 10V, 1MHz. With a reverse recovery time (trr) of 25 ns, it falls within the fast recovery speed classification. Operating across a junction temperature range of -65°C to 175°C, this component meets the MIL-PRF-19500/477 qualification. Its SQ-MELF, A package is suitable for surface mount applications. This device finds use in demanding aerospace and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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