JAN1N5802URS
DIODE GEN PURP 50V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5802URS is a military-grade, general-purpose diode with a maximum repetitive reverse voltage of 50V and an average rectified forward current of 1A. This surface-mount device, housed in a SQ-MELF, A (D-5A) package, features a forward voltage drop of 875mV at 1A and a reverse leakage current of 1 µA at 50V. With a specified capacitance of 25pF at 10V and 1MHz, and a reverse recovery time of 25ns, this diode is classified as fast recovery. It operates across a junction temperature range of -65°C to 175°C and is qualified under MIL-PRF-19500/477. This component is commonly specified in aerospace, defense, and industrial applications requiring robust performance and high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
| Qualification | MIL-PRF-19500/477 |
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