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JAN1N5802/TR

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JAN1N5802/TR

DIODE GEN PURP 50V 2.5A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N5802-TR is a military-grade, general-purpose diode with a 50V reverse voltage rating and a 2.5A average rectified forward current. This axial-packaged device features a maximum forward voltage of 975mV at its rated forward current and a low reverse leakage of 1µA at 50V. Its fast recovery time of 25ns makes it suitable for applications requiring efficient switching. The component is qualified to MIL-PRF-19500/477 and operates across a junction temperature range of -65°C to 175°C. This diode is commonly utilized in aerospace, defense, and industrial power supply applications. The product is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseA, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25 ns
TechnologyStandard
Capacitance @ Vr, F25pF @ 10V, 1MHz
Current - Average Rectified (Io)2.5A
Supplier Device PackageA, Axial
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If975 mV @ 2.5 A
Current - Reverse Leakage @ Vr1 µA @ 50 V
QualificationMIL-PRF-19500/477

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Microchip Technology - JAN1N5802/TR - Microchip USA