JAN1N5802/TR
DIODE GEN PURP 50V 2.5AManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JAN1N5802-TR is a military-grade, general-purpose diode with a 50V reverse voltage rating and a 2.5A average rectified forward current. This axial-packaged device features a maximum forward voltage of 975mV at its rated forward current and a low reverse leakage of 1µA at 50V. Its fast recovery time of 25ns makes it suitable for applications requiring efficient switching. The component is qualified to MIL-PRF-19500/477 and operates across a junction temperature range of -65°C to 175°C. This diode is commonly utilized in aerospace, defense, and industrial power supply applications. The product is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 2.5A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 2.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
| Qualification | MIL-PRF-19500/477 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
