JAN1N5711UB/TR
SMALL-SIGNAL SCHOTTKYManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JAN1N5711UB-TR is a small-signal Schottky diode with a maximum reverse voltage of 50 V and an average rectified current of 33 mA. This component features a low forward voltage of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. The capacitance at 0 V and 1 MHz is 2 pF. Manufactured to MIL-PRF-19500/444 military specifications, it is supplied in a 3-SMD, No Lead UB package designed for surface mounting. The operating junction temperature range is -65°C to 150°C. This diode is commonly utilized in aerospace, defense, and high-reliability industrial applications requiring robust performance and adherence to stringent quality standards. The device is presented in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 33mA |
| Supplier Device Package | UB |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 15 mA |
| Current - Reverse Leakage @ Vr | 200 nA @ 50 V |
| Qualification | MIL-PRF-19500/444 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
