JAN1N5621US
DIODE GEN PURP 800V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5621US is a military-grade, general-purpose diode designed for high-voltage applications. This SQ-MELF, A packaged device offers a maximum DC reverse voltage of 800V and an average rectified forward current capability of 1A. Featuring a fast recovery time of 300 ns, it is suitable for applications requiring rapid switching. The diode exhibits a low reverse leakage current of 500 nA at 800V and a forward voltage drop of 1.6V at 3A. Operating across a junction temperature range of -65°C to 175°C, the JAN1N5621US is qualified to MIL-PRF-19500/429 standards. This component finds application in demanding sectors such as aerospace, defense, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 300 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 800 V |
| Qualification | MIL-PRF-19500/429 |
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