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JAN1N5621/TR

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JAN1N5621/TR

DIODE GEN PURP 800V 1A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology's JAN1N5621-TR is an 800V, 1A general-purpose diode designed for applications demanding high reliability and performance. This military-grade component, qualified to MIL-PRF-19500/429, features a maximum forward voltage of 1.6V at 3A and a reverse leakage current of 500 nA at its peak reverse voltage. With a fast recovery time of 300 ns, it is suitable for power supply rectification, switching applications, and general signal processing. The diode operates across a wide temperature range of -65°C to 175°C and is supplied in an A, Axial package on Tape & Reel for efficient automated assembly. Its robust construction and adherence to stringent military specifications make it a dependable choice for demanding electronic systems in aerospace, defense, and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseA, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)300 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1A
Supplier Device PackageA, Axial
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)800 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 3 A
Current - Reverse Leakage @ Vr500 nA @ 800 V
QualificationMIL-PRF-19500/429

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