JAN1N5619/TR
DIODE GEN PURP 600V 1AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5619-TR is a general-purpose diode designed for demanding applications. This military-grade component features a 600V reverse voltage (Vr) rating and a 1A average rectified forward current (Io). With a forward voltage (Vf) of 1.6V at 3A, it offers efficient rectification. The diode exhibits a reverse leakage current of 500 nA at 800V and a reverse recovery time (trr) of 250 ns, classifying it as a fast recovery diode. Mounted via through-hole technology with an axial package, it is supplied in Tape & Reel (TR) for automated assembly. Qualified to MIL-PRF-19500/429, this device is suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 800 V |
| Qualification | MIL-PRF-19500/429 |
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