JAN1N5618US
DIODE GEN PURP 600V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5618US is a military-grade general-purpose silicon rectifier diode. This standard recovery diode features a 600V reverse voltage (Vr) and an average rectified forward current (Io) of 1A. The device exhibits a maximum forward voltage (Vf) of 1.3V at 3A and a low reverse leakage current of 500 nA at 600V. Designed for demanding applications, it operates across a junction temperature range of -65°C to 200°C. The JAN1N5618US is packaged in a SQ-MELF, A (D-5A) surface-mount case, compliant with MIL-PRF-19500/429 qualification. Its robust construction and specifications make it suitable for use in aerospace, defense, and industrial power management systems requiring reliable rectification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 600 V |
| Qualification | MIL-PRF-19500/429 |
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