JAN1N5616US/TR
DIODE GEN PURP 400V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5616US-TR is a military-grade general-purpose diode with a maximum DC reverse voltage of 400 V and an average rectified current of 1 A. This device features a low reverse leakage of 500 nA at 400 V and a forward voltage drop of 1.3 V at 3 A. The JAN1N5616US-TR utilizes standard recovery technology with a typical reverse recovery time of 2 µs. It is supplied in a D-5A (SQ-MELF, A) package suitable for surface mounting and is provided in tape and reel packaging. This component is qualified to MIL-PRF-19500/427 and is designed for operation across a wide temperature range of -65°C to 200°C. Applications for this diode include demanding environments within aerospace and defense sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 400 V |
| Qualification | MIL-PRF-19500/427 |
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