JAN1N5615/TR
DIODE GEN PURP 200V 1AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5615-TR is a military-grade general-purpose silicon rectifier diode. This axial-leaded component offers a maximum repetitive reverse voltage of 200V and a continuous average forward current of 1A. Featuring a fast recovery time of 150ns, it is suitable for applications requiring efficient rectification. The diode exhibits a typical forward voltage drop of 1.6V at 3A and a low reverse leakage current of 500 nA at its rated 200V. Qualified to MIL-PRF-19500/429, this device is designed for operation across a wide temperature range from -65°C to 175°C. It is supplied in a Tape & Reel (TR) package for automated assembly. This component finds application in various military and industrial systems requiring reliable power rectification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 200 V |
| Qualification | MIL-PRF-19500/429 |
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