JAN1N5554/TR
DIODE GEN PURP 1KV 3AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5554-TR is a general-purpose diode featuring a 1000V reverse voltage rating and a 3A average rectified current capability. This through-hole component, housed in an axial package, is qualified to MIL-PRF-19500/420, indicating its suitability for demanding applications. The diode exhibits a low forward voltage drop of 1.3V at 9A and a reverse leakage current of 1 µA at 1V. Its standard recovery speed exceeds 500ns with an Io of over 200mA. Operating across a junction temperature range of -65°C to 175°C, it is commonly utilized in aerospace, defense, and industrial power supply applications. The component is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1 V |
| Qualification | MIL-PRF-19500/420 |
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