JAN1N5553/TR
DIODE GEN PURP 800V 3AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5553-TR is a military-grade general-purpose diode with a maximum DC reverse voltage of 800 V and an average rectified current capability of 3A. This component features a forward voltage drop of 1.3 V at 9A and a reverse leakage current of 1 µA at 800 V. Designed for high reliability, it operates within a junction temperature range of -65°C to 175°C. The diode exhibits a standard reverse recovery time of 2 µs. It is housed in a B, Axial package and supplied in Tape & Reel (TR) packaging, conforming to MIL-PRF-19500/420 qualification standards. This device is suitable for applications in aerospace, defense, and industrial sectors requiring robust performance under demanding conditions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Qualification | MIL-PRF-19500/420 |
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